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php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor rev. 02 12 march 2001 product speci?cation c c 1. description n-channel enhancement mode ?eld-effect power transistor in a plastic package using trenchmos? 1 technology. product availability: php30nq15t in sot78 (to-220ab) PHB30NQ15T in sot404 (d 2 -pak). 2. features n fast switching n low on-state resistance. 3. applications n dc to dc converters n switched mode power supplies. 4. pinning information [1] it is not possible to make connection to pin 2 of the sot404 package. 1. trenchmos is a trademark of royal philips electronics. table 1: pinning - sot78 and sot404, simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot78 (to-220ab) sot404 (d 2- pak) 2 drain (d) [1] 3 source (s) mb drain (d) mbk106 12 mb 3 13 2 mbk116 mb s d g mbb076
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 2 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. 5. quick reference data 6. limiting values table 2: quick reference data symbol parameter conditions typ max unit v ds drain-source voltage (dc) t j =25to175 c - 150 v i d drain current (dc) t mb =25 c; v gs =10v - 29 a p tot total power dissipation t mb =25 c - 150 w t j junction temperature - 175 c r dson drain-source on-state resistance v gs =10v; i d =15a - 63 m w table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) t j =25to175 c - 150 v v dgr drain-gate voltage (dc) t j =25to175 c; r gs =20k w- 150 v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t mb =25 c; v gs =10v; figure 2 and 3 - 29 a t mb = 100 c; v gs =10v; figure 2 - 20 a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; figure 3 - 116 a p tot total power dissipation t mb =25 c; figure 1 - 150 w t stg storage temperature - 55 +175 c t j operating junction temperature - 55 +175 c source-drain diode i s source (diode forward) current (dc) t mb =25 c - 29 a i sm peak source (diode forward) current t mb =25 c; pulsed; t p 10 m s - 116 a avalanche ruggedness e as non-repetitive avalanche energy unclamped inductive load; i as = 26 a; t p = 0.2 ms; v dd 25 v; r gs =50 w ; v gs = 10 v; starting t j =25 c; figure 4 - 502 mj i as non-repetitive avalanche current - 29 a
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 3 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. v gs 3 10 v fig 1. normalized total power dissipation as a function of mounting base temperature. fig 2. normalized continuous drain current as a function of mounting base temperature. t mb =25 c; i dm is single pulse. unclamped inductive load; v dd 25 v; r gs =50 w ; v gs = 10 v; starting t j =25 c and 150 c. fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage. fig 4. non-repetitive avalanche ruggedness current as a function of pulse duration. 03aa16 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 p der t mb ( o c) (%) 03aa24 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 i der (%) t mb ( o c) p der p tot p tot 25 c () ---------------------- 100 % = i der i d i d25c () ------------------ - 100 % = r dson = v ds / i d d.c. t p = 10 m s 100 m s 1 ms 10 ms 100 ms v ds (v) 10 3 10 2 10 1 10 1 10 -1 10 2 i d (a) 10 3 003aaa055 10 2 10 1 10 -1 110 10 -1 10 -2 10 -3 t j prior to avalanche = 150 o c 25 o c t p (ms) i as (a) 003aaa054
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 4 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. 7. thermal characteristics 7.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions value unit r th(j-mb) thermal resistance from junction to mounting base figure 5 1 k/w r th(j-a) thermal resistance from junction to ambient sot78 package; vertical in still air 60 k/w sot404 package; mounted on printed circuit board; minimum footprint. 50 k/w fig 5. transient thermal impedance from junction to mounting base as a function of pulse duration. 10 1 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) d = 0.5 0.2 0.05 0.02 single pulse t p t p t p t t d = 003aaa056 0.1
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 5 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. 8. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 m a; v gs =0v 150 -- v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 10 t j =25 c234v t j = 175 c1 -- v i dss drain-source leakage current v gs =0v; v ds = 150 v t j =25 c - 0.05 10 m a t j = 175 c -- 500 m a i gss gate-source leakage current v ds =0v; v gs = 10 v - 0.02 100 na r dson drain-source on-state resistance v gs =10v; i d =15a; figure 8 and 9 t j =25 o c - 60 63 m w t j = 175 c -- 176 m w dynamic characteristics q g(tot) total gate charge i d = 30 a; v ds = 120 v; v gs =10v; figure 15 - 55 - nc q gs gate-source charge - 10 - nc q gd gate-drain (miller) charge - 20 27 nc c iss input capacitance v gs =0v; v ds =25v; f = 1 mhz; figure 13 - 2390 - pf c oss output capacitance - 240 - pf c rss reverse transfer capacitance - 98 - pf t d(on) turn-on delay time v dd = 75 v; r d = 2.7 w ; v gs =10v; r g = 5.6 w - 14 - ns t r rise time - 50 - ns t d(off) turn-off delay time - 48 - ns t f fall time - 38 - ns source-drain diode v sd source-drain (diode forward) voltage i s = 25 a; v gs =0v; figure 14 - 0.9 1.2 v t rr reverse recovery time i s =20a; di s /dt = - 100 a/ m s; v gs =0v; v r =25v - 105 - ns q r recovered charge - 0.55 m c
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 6 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. t j =25 ct j =25 c and 175 c; v ds > i d r dson fig 6. output characteristics: drain current as a function of drain-source voltage; typical values. fig 7. transfer characteristics: drain current as a function of gate-source voltage; typical values. t j =25 c fig 8. drain-source on-state resistance as a function of drain current; typical values. fig 9. normalized drain-source on-state resistance factor as a function of junction temperature. i d (a) v ds (v) 35 30 25 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2.0 vgs = 10 v 8 v 6 v 5.4 v 5.2 v 5.0 v 4.8 v 4.6 v 4.4 v 003aaa057 30 25 20 15 10 0 5 t j = 175 o c t j = 25 o c i d (a) v gs (v) 0123456789 10 003aaa062 5.2 v 5.4 v 6.0 v 4.4 v 4.6 v 4.8 v 5.0 v v gs = 10v 8.0 v 0 0.04 0.06 0.12 0.16 0.20 r dson ( w ) 0 5 10 15 20 25 30 i d (a) 003aaa061 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 -40 40 80 120 160 a t j ( o c) 003aaa064 a r dson r dson 25 c () ---------------------------- =
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 7 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. i d = 1 ma; v ds =v gs t j =25 c fig 10. gate-source threshold voltage as a function of junction temperature. fig 11. sub-threshold drain current as a function of gate-source voltage. t j =25 c and 175 c; v ds > i d r dson v gs = 0 v; f = 1 mhz fig 12. forward transconductance as a function of drain current; typical values. fig 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 2.5 -60 -20 20 1 0.5 0 1.5 2 60 100 140 180 3.5 v gs(th) (v) t j ( o c) 3 4 4.5 max typ min 003aaa023 003aaa024 1 2 3 4 5 max typ min i d v gs (v) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 (a) 40 30 20 10 5 0 15 25 35 g fs (s) t j = 25 o c t j = 175 o c 0 5 1015 202530 i d (a) 003aaa063 10 4 10 3 10 2 10 11010 2 10 -1 c iss , c oss , c rss (pf) v ds (v) c iss c rss c oss 003aaa065
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 8 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. t j =25 c and 175 c; v gs =0v i d = 30 a; v dd = 30 v and 120 v fig 14. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. fig 15. gate-source voltage as a function of gate charge; typical values. 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) t j = 175 o c t j = 25 o c v sd (v) 003aaa067 v dd = 30 v v dd = 120 v 0 2 4 6 8 10 12 14 v gs (v) 0102030405060 q g (nc) 003aaa066
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 9 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. 9. package outline fig 16. sot78 references outline version european projection issue date iec jedec eiaj sot78 sc-46 3-lead to-220ab d d 1 q p l 123 l 1 (1) b 1 e e b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 dimensions (mm are the original dimensions) a e a 1 c note 1. terminals in this zone are not tinned. q l 2 unit a 1 b 1 d 1 e p mm 2.54 qq a b d c l 2 max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 l 1 (1) e l 00-09-07 01-02-16 mounting base
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 10 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. fig 17. sot404 (d 2 -pak). unit a references outline version european projection issue date iec jedec eiaj mm a 1 d 1 d max. e el p h d q c 2.54 2.60 2.20 15.80 14.80 2.90 2.10 11 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b dimensions (mm are the original dimensions) sot404 0 2.5 5 mm scale plastic single-ended surface mounted package (philips version of d 2 -pak); 3 leads (one lead cropped) sot404 e e e b d 1 h d d q l p c a 1 a 13 2 mounting base 99-06-25 01-02-12
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 11 of 14 9397 750 08037 ? philips electronics n.v. 2001. all rights reserved. 10. revision history table 6: revision history rev date cpcn description 02 20010312 product speci?cation; second version; supersedes initial version phb_php30nq15t_1 of aug. 1999 ? max qgd value added, ta b l e 1 01 aug. 1999 - product speci?cation; initial version
philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor product speci?cation rev. 02 12 march 2001 12 of 14 9397 750 08037 ? philips electronics n.v. 2001 all rights reserved. 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. datasheet status product status de?nition [1] objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. spec i?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a la ter date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make ch anges at any time without notice in order to improve design and supply the best possible product.
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? philips electronics n.v. 2001. printed in the netherlands all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 12 march 2001 document order number: 9397 750 08037 contents philips semiconductors php30nq15t; PHB30NQ15T n-channel enhancement mode ?eld-effect transistor 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 thermal characteristics . . . . . . . . . . . . . . . . . . . 4 7.1 transient thermal impedance . . . . . . . . . . . . . . 4 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 12 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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